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Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices.

Chih-Feng YenYu-Ya HuangShen-Hao TsaoShih-Hao LinChun-Hu Cheng
Published in: ICKII (2022)
Keyphrases
  • electrical properties
  • leakage current
  • silicon nitride
  • wide range
  • film thickness
  • real time
  • data sets
  • mobile devices
  • genetic algorithm
  • high efficiency
  • social influence