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A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices.

Jianguo YangRuijun LinKeji ZhouYuejun ZhangXiaoyong XueHangbing Lv
Published in: Microelectron. J. (2022)
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