A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices.
Jianguo YangRuijun LinKeji ZhouYuejun ZhangXiaoyong XueHangbing LvPublished in: Microelectron. J. (2022)