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Performance Improvement in Nanoscale Ge-GaAs Heterojunction Junctionless Tunnel FET Using a Dual Material Gate.
Bahniman Ghosh
Shibir Basak
Pranav Kumar Asthana
Published in:
J. Low Power Electron. (2014)
Keyphrases
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field effect transistors
steady state
mechanical properties
high density
mathematical analysis
high speed
atomic force microscopy
multiscale
simulation model
injection lasers
real time
hidden markov models
significant improvement
multiresolution
three dimensional
case study
artificial intelligence