Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI.
Guillaume TochouAndreia CathelinAntoine FrappéAndreas KaiserJan M. RabaeyPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2022)
Keyphrases
- low voltage
- cmos technology
- silicon on insulator
- low power
- high power
- power consumption
- high speed
- power management
- power dissipation
- power supply
- parallel processing
- power line
- radio frequency
- design considerations
- low cost
- metal oxide
- reactive power
- leakage current
- transmission line
- computer vision
- real time
- energy saving
- embedded systems