A 69.5 mW 20 GS/s 6b Time-Interleaved ADC With Embedded Time-to-Digital Calibration in 32 nm CMOS SOI.
Vanessa H.-C. ChenLawrence T. PileggiPublished in: IEEE J. Solid State Circuits (2014)
Keyphrases
- silicon on insulator
- dynamic random access memory
- analog to digital converter
- power consumption
- cmos technology
- metal oxide semiconductor
- power supply
- circuit design
- hd video
- camera calibration
- mixed signal
- ibm power processor
- nm technology
- low cost
- embedded systems
- cmos image sensor
- high speed
- single chip
- computer vision
- intrinsic parameters
- low power
- power dissipation
- lens distortion
- parallel processing
- high resolution