Effect of Gate and Channel Engineering on Digital Performance Parameters Using Tied (3T) and Independent (4T) Double Gate MOSFETs.
Neha JagwaniVikas VijayvargiyaSantosh Kumar VishvakarmaPublished in: iNIS (2015)
Keyphrases
- multiple input
- field effect transistors
- maximum likelihood
- leakage current
- nano scale
- low voltage
- parameter estimation
- cmos technology
- multi channel
- engineering design
- artificial intelligence
- probability density function
- sensitivity analysis
- high resolution
- steady state
- computer simulation
- parameter values
- input data
- low cost
- communication channels
- wireless sensor networks
- evolutionary algorithm
- computer science
- information systems
- data sets