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Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology.
Y. T. Chiang
Y. K. Fang
Y. J. Huang
T. H. Chou
S. Y. Yeh
C. S. Lin
Published in:
Microelectron. Reliab. (2008)
Keyphrases
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cmos technology
low power
low voltage
leakage current
mixed signal
power consumption
spl times
low cost
room temperature
high speed
parallel processing
power dissipation
image sensor
design considerations
embedded systems
silicon dioxide
object oriented