Gate oxide trap characterization under DC and pulse stress.

Sangku Park Jaehoon Lee Y. Ryu J. Kang B. So Dohyun Baek

Published in: ICECS (2010)

Keyphrases

silicon dioxide
leakage current
field effect transistors
low voltage
computer simulation
room temperature
dc programming
real time
neural network
data mining
information systems
decision trees
low cost
mathematical analysis
multiple input
metal oxide