Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications.
Manuel EscuderoMatteo-Alessandro KutschakNico FontanaNoel RodriguezDiego Pedro MoralesPublished in: IEEE Access (2020)
Keyphrases
- low voltage
- transmission line
- metal oxide
- high speed
- leakage current
- tunnel diode
- power system
- high voltage
- design considerations
- energy dissipation
- permalloy films
- x ray
- electric field
- frequency band
- low power
- high frequency
- solid state
- operating conditions
- pulse width
- power management
- room temperature
- neural network
- reactive power
- genetic algorithm