A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit.
Byung-Gil JeonMun-Kyu ChoiYoonjong SongSeung-Kyu OhYeonbae ChungKang-Deog SuhKinam KimPublished in: IEEE J. Solid State Circuits (2000)