A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices.
Kaito HikakeZhuo LiJunxiang HaoChitra PandyTakuya SarayaToshiro HiramotoTakanori TakahashiMutsunori UenumaYukiharu UraokaMasaharu KobayashiPublished in: VLSI Technology and Circuits (2023)