A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.
Po-Hao LeeChia-Fu LeeYi-Chun ShihHon-Jarn LinYen-An ChangCheng-Han LuYu-Lin ChenChieh-Pu LoChung-Chieh ChenCheng-Hsiung KuoTan-Li ChouChia-Yu WangJ. J. WuRoger WangHarry ChuangYih WangYu-Der ChihTsung-Yung Jonathan ChangPublished in: ISSCC (2023)