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A capacitorless twin-transistor random access memory (TTRAM) on SOI.

Fukashi MorishitaHideyuki NodaTakayuki GyohtenMako OkamotoTakashi IpposhiShigeto MaegawaKatsumi DosakaKazutami Arimoto
Published in: CICC (2005)
Keyphrases
  • random access memory
  • design considerations
  • high speed
  • low voltage
  • integrated circuit
  • low power
  • power dissipation
  • embedded dram
  • response time
  • memory access