Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation.
Kazuhiro MochizukiKen-ichi TanakaTakashi ShiotaTakafumi TaniguchiHiroyuki UchiyamaPublished in: IEICE Trans. Electron. (2006)
Keyphrases
- field effect transistors
- high density
- steady state
- injection lasers
- mathematical analysis
- room temperature
- simulated annealing
- high speed
- infrared
- cmos technology
- image acquisition
- integrated circuit
- power plant
- information retrieval
- electron beam
- low power
- visible spectrum
- power system
- control system
- image processing