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A 500 mV to 1.0 V 128 Kb SRAM in Sub 20 nm Bulk-FinFET Using Auto-adjustable Write Assist.

Prashant DubeyGaurav AhujaVaibhav VermaSanjay Kumar YadavAmit Khanuja
Published in: VLSI Design (2014)
Keyphrases
  • knowledge base
  • leakage current
  • power consumption
  • data transmission
  • cmos technology
  • random access memory
  • information retrieval
  • case study
  • read write
  • low voltage
  • power reduction
  • nm technology