Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts.
Patrick G. WhitingNicholas G. RudawskiM. R. HolzworthStephen J. PeartonKevin S. JonesLu LiuT. S. KangFan RenPublished in: Microelectron. Reliab. (2017)