Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window.
Zhouhang JiangYi XiaoSwetaki ChatterjeeHalid MulaosmanovicStefan DünkelSteven SossSven BeyerRajiv V. JoshiYogesh Singh ChauhanHussam AmrouchVijaykrishnan NarayananKai NiPublished in: VLSI Technology and Circuits (2022)
Keyphrases
- field effect transistors
- sliding window
- memory requirements
- memory usage
- window size
- associative memory
- low memory
- memory size
- limited memory
- case study
- computational complexity
- case based reasoning
- memory space
- random access
- cross section
- adaptive window
- data sets
- computational power
- high density
- artificial neural networks
- website
- information systems
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- machine learning
- neural network