Low Parasitic-Inductance Packaging of a 650 V/150 A Half-Bridge Module Using Enhancement-Mode Gallium-Nitride High Electron Mobility Transistors.
Shengchang LuTianyu ZhaoZichen ZhangKhai D. T. NgoRolando BurgosGuo-Quan LuPublished in: IEEE Trans. Ind. Electron. (2023)