4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching.
Kazuki MashimoRyo IshikawaKazuhiko HonjoPublished in: IEICE Trans. Electron. (2018)
Keyphrases
- high efficiency
- frequency band
- high power
- dual band
- waveguide
- real and synthetic datasets
- power consumption
- high accuracy
- dielectric constant
- low power
- density based clustering
- memory space
- high speed
- radiation pattern
- result quality
- multi band
- structuring elements
- data streams
- dynamic range
- high sensitivity
- arbitrary shape
- high density