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Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics.

Inanc MericCory R. DeanNicholas PetroneLei WangJames HonePhilip KimKenneth L. Shepard
Published in: Proc. IEEE (2013)
Keyphrases
  • field effect transistors
  • schottky barrier
  • high density
  • steady state
  • mathematical analysis
  • semiconductor devices
  • thin film
  • electron microscope
  • database
  • real time
  • databases
  • three dimensional
  • higher order