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A 0.33-V, 500-kHz, 3.94-µW 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist.

Chien-Yu LuMing-Hsien TuHao-I YangYa-Ping WuHuan-Shun HuangYuh-Jiun LinKuen-Di LeeYung-Shin KaoChing-Te ChuangShyh-Jye JouWei Hwang
Published in: IEEE Trans. Circuits Syst. II Express Briefs (2012)
Keyphrases
  • random access memory
  • line segments
  • knowledge base
  • data sets
  • database systems
  • high speed
  • operating system
  • positive and negative
  • production line
  • low voltage
  • random number generator