High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates.
Nethaji DharmarasuPablo O. VaccaroShanmugam SaravananJose M. Zanardi OcampoKazuyoshi KubotaNobuo SaitoPublished in: IEICE Electron. Express (2004)
Keyphrases
- high density
- light emitting diodes
- light emitting
- gallium arsenide
- field effect transistors
- low density
- thin film
- close proximity
- data center
- high power
- high bandwidth
- magnetic recording
- video camera
- light intensity
- databases
- magnetic tape
- computer vision
- coding scheme
- cost effective
- single image
- high resolution
- three dimensional