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8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology.

Uksong KangHoeju ChungSeongmoo HeoDukha ParkHoon LeeJin Ho KimSoon-Hong AhnSooho ChaJaesung AhnDukmin KwonJaewook LeeHan-Sung JooWoo-Seop KimDong Hyeon JangNam-Seog KimJung-Hwan ChoiTae-Gyeong ChungJei-Hwan YooJoo-Sun ChoiChanghyun KimYoung-Hyun Jun
Published in: IEEE J. Solid State Circuits (2010)
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