A novel high-performance trench lateral double-diffused MOSFET with buried oxide bump layer.
Hujun JiaYangyi ShenHuan WangXiaojie WangYunfan ZhangShunwei ZhuYintang YangPublished in: Microelectron. J. (2023)
Keyphrases
- silicon dioxide
- multi layer
- fuel cell
- electron microscopy
- high reliability
- databases
- ground penetrating radar
- scientific computing
- high efficiency
- metal oxide
- upper layer
- room temperature
- diffusion process
- information systems
- neural network
- cost effective
- general purpose
- wireless sensor networks
- artificial intelligence
- genetic algorithm
- machine learning
- real world
- real time
- database