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cell for sub 30nm DRAM technology.

Youngseung ChoYoosang HwangHuijung KimEunok LeeSoojin HongHyun-Woo ChungDaeik KimJinyoung KimYong Chul OhHyeongsun HongGyo-Young JinChilhee Chung
Published in: ESSDERC (2012)
Keyphrases
  • dynamic random access memory
  • cmos technology
  • data processing
  • rapid development
  • high density
  • technological advances
  • cost effective
  • real time
  • databases
  • neural network
  • st century
  • embedded dram
  • silicon on insulator