1.5-nm Node Surrounding Gate Transistor (SGT)-SRAM Cell with Staggered Pillar and Self-Aligned Process for Gate, Bottom Contact, and Pillar.
Yisuo LiKen'ichi KanazawaTetsuo IzawaKoji SakuiGeorg StrofOskar BaumgartnerGerhard RzepaMarkus KarnerZlatan StanojevicNozomu HaradaFujio MasuokaPublished in: IMW (2021)