A 128-kb 10% power reduced 1T high density ROM with 0.56 ns access time using bitline edge sensing in sub 16nm bulk FinFET technology.
Vaibhav VermaSachin TanejaPritender SinghSanjeev Kumar JainPublished in: SoCC (2015)
Keyphrases
- high density
- high power
- low density
- close proximity
- silicon on insulator
- data center
- power consumption
- knowledge base
- cost effective
- field effect transistors
- high bandwidth
- real time
- case study
- thin film
- magnetic tape
- nm technology
- end to end
- data processing
- magnetic recording
- storage devices
- power management
- network simulator
- edge detection
- sensor networks
- ad hoc networks