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AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers.

Hsien-Chin ChiuShang-Cyun ChenJiun-Wei ChiuBo-Hong LiHou-Yu WangLi-Yi PengHsiang-Chun WangKuang-Po Hsueh
Published in: Microelectron. Reliab. (2018)
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