AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers.
Hsien-Chin ChiuShang-Cyun ChenJiun-Wei ChiuBo-Hong LiHou-Yu WangLi-Yi PengHsiang-Chun WangKuang-Po HsuehPublished in: Microelectron. Reliab. (2018)