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Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology.

Kevin A. KamBrianne I. C. TenganCody K. HayashiRichard C. OrdonezDavid G. Garmire
Published in: Sensors (2018)
Keyphrases
  • field effect transistors
  • gate dielectrics
  • sensor technology
  • high density
  • steady state
  • mathematical analysis
  • schottky barrier
  • frequency domain
  • image sensor
  • signal processing