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A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit.

Shyh-Shyuan SheuKuo-Hsing ChengYu-Sheng ChenPang-Shiu ChenMing-Jinn TsaiYu-Lung Lo
Published in: IEICE Trans. Electron. (2012)
Keyphrases
  • random access memory
  • low voltage
  • high speed
  • real time
  • design considerations
  • memory access
  • low cost