A Comparative Study of 6T and 4T SRAM Cells in Double-Gate CMOS with Statistical Variation.
Bastien GiraudAmara AmaraAndrei VladimirescuPublished in: ISCAS (2007)
Keyphrases
- cmos technology
- power consumption
- low voltage
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- leakage current
- random access memory
- nm technology
- high speed
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- data transmission
- real time
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- statistical analysis
- statistical information
- power dissipation
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- parallel processing
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- neural network
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- digital camera