Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor.
Getenet Tesega AyeleStéphane MonfrayFrédéric BoeufJean-Pierre CloarecSerge EcoffeyDominique DrouinEtienne PuyooAbdelkader SouifiPublished in: ESSDERC (2017)
Keyphrases
- field effect transistors
- high density
- steady state
- mathematical analysis
- schottky barrier
- knowledge based systems
- case study
- multi agent systems
- industrial applications
- software engineering
- high speed
- information systems
- data sets
- chip design
- database
- markov chain
- optimal solution
- st century
- integrated circuit
- development environment
- silicon dioxide