Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications.

S. Ohmi H. Morita M. Hayashi A. Ihara J. Y. Pyo

Published in: DRC (2021)

Keyphrases

leakage current
silicon dioxide
high frequency
multi layer
memory usage
memory requirements
memory size
application layer
memory space
mahalanobis distance
neural network
signal processing
record linkage
computational power
analog circuits
multiple layers
analog vlsi
parallel algorithm