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Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide.
Wenlun Zhang
Baokang Wang
Published in:
IEICE Trans. Electron. (2021)
Keyphrases
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field effect transistors
steady state
high density
chip design
mathematical analysis
schottky barrier
semiconductor devices
silicon dioxide
case study
markov chain
learning algorithm
expert systems
search space
design process
cmos technology
nano scale