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The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application.
Thomas Nirschl
Peng-Fei Wang
Walter Hansch
Doris Schmitt-Landsiedel
Published in:
ISCAS (3) (2004)
Keyphrases
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simulation model
schottky barrier
field effect transistors
simulation models
agent based simulation
discrete event
temperature field
mathematical analysis
semiconductor devices
steady state
mathematical model
high density
simulation tool
simulation environment
numerical simulations
image sequences
analytical model