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Four-State Magnetic Random Access Memory and Ternary Content Addressable Memory Using CoFe-Based Magnetic Tunnel Junctions.

Tetsuya UemuraTakao MarukameKen-ichi MatsudaMasafumi Yamamoto
Published in: ISMVL (2007)
Keyphrases
  • random access memory
  • design considerations
  • low voltage
  • ni fe
  • database
  • main memory
  • general purpose
  • memory access
  • content addressable memory