Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode.
Marcello A. AnileJosé A. CarrilloIrene M. GambaChi-Wang ShuPublished in: VLSI Design (2001)
Keyphrases
- metal oxide
- computer simulation
- multi channel
- approximation error
- error bounds
- probabilistic relaxation
- x ray
- iterative algorithms
- multiple access
- wireless sensor networks
- upper approximation
- noisy channel
- si sio
- objective function
- leakage current
- integrality gap
- approximation methods
- linear programming relaxation
- numerical simulations
- low cost
- optimal solution