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Device and Compact Circuit-Level Modeling of Graphene Field-Effect Transistors for RF and Microwave Applications.

Lei SangYulong XuYun WuRongmin Chen
Published in: IEEE Trans. Circuits Syst. I Regul. Pap. (2018)
Keyphrases
  • field effect transistors
  • semiconductor devices
  • schottky barrier
  • steady state
  • high density
  • mathematical analysis
  • electron beam
  • thin film
  • higher level
  • modeling method
  • frequency band
  • analog vlsi