A simulation study about the memory operation of 3D-stacked capacitor-less 1T DRAM cells based on ferroelectric field-effect transistors (FeFETs).
Taegun KimDong Keun LeeSihyun KimSangwan KimPublished in: ISOCC (2023)
Keyphrases
- simulation study
- high density
- field effect transistors
- main memory
- schottky barrier
- memory subsystem
- monte carlo
- memory requirements
- dynamic random access memory
- semiconductor devices
- steady state
- memory usage
- memory size
- external memory
- databases
- power supply
- data center
- index structure
- database management systems
- transmission line