Login / Signup

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs.

Seonhaeng LeeDongwoo KimCheolgyu KimChiho LeeJeongsoo ParkBongkoo Kang
Published in: Microelectron. Reliab. (2012)
Keyphrases
  • field effect transistors
  • mechanical properties
  • information retrieval
  • multi channel
  • genetic algorithm
  • steady state
  • high density
  • real time
  • computational complexity
  • low cost