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Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour.

Boubekeur Tala-IghilAmrane OukaourHamid GualousBertrand BoudartBertrand PouderouxJean-Lionel TroletMarc Piccione
Published in: Microelectron. Reliab. (2011)
Keyphrases
  • field effect transistors
  • high density
  • steady state
  • mathematical analysis
  • three dimensional
  • data sets
  • markov chain
  • database