A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications.

M. Saravanan Eswaran Parthasarathy

Published in: Microelectron. J. (2021)

Keyphrases

mixed signal
low power
ultra low power
schottky barrier
field effect transistors
circuit design
current status
high speed
cmos image sensor
mathematical analysis
high density
power consumption
low cost
long term
data conversion
databases
delta sigma
multi channel
steady state
real world