A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications.
Chia-Fu LeeCheng-Han LuCheng-En LeeHaruki MoriHidehiro FujiwaraYi-Chun ShihTan-Li ChouYu-Der ChihTsung-Yung Jonathan ChangPublished in: VLSI Technology and Circuits (2022)
Keyphrases
- random access memory
- artificial intelligence
- embedded dram
- design considerations
- edge detection
- edge information
- expert systems
- dynamic random access memory
- analog to digital converter
- low voltage
- precision and recall
- cross section
- high precision
- case based reasoning
- power consumption
- memory access
- memory requirements
- intelligent systems
- nm technology
- knowledge representation
- digital libraries