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Evaluation of Stability, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits.

Yin-Nien ChenMing-Long FanVita Pi-Ho HuPin SuChing-Te Chuang
Published in: IEEE J. Emerg. Sel. Topics Circuits Syst. (2014)
Keyphrases
  • low voltage
  • random access memory
  • cmos technology
  • high speed
  • design considerations
  • power line
  • leakage current
  • power consumption
  • low power
  • real time
  • moving objects
  • mixed signal