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Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation.
Ryuji Ohba
Daisuke Matsushita
Koichi Muraoka
Shinichi Yasuda
Tetsufumi Tanamoto
Ken Uchida
Shinobu Fujita
Published in:
ISVLSI (2006)
Keyphrases
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high rate
random number
low rate
high temperature
false alarms
random number generator
random numbers
pseudorandom
false negative
random number generators
high speed
pseudo random number generators
real time
multi class
intrusion detection