Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices.
Seongjae ChoJung Hoon LeeYoon KimJang-Gn YunHyungcheol ShinByung-Gook ParkPublished in: IEICE Trans. Electron. (2010)
Keyphrases
- flash memory
- simulation study
- hand held devices
- embedded systems
- embedded devices
- solid state
- garbage collection
- file system
- main memory
- buffer management
- disk drives
- storage devices
- hard disk
- data storage
- random access
- monte carlo
- b tree
- database systems
- small size
- memory management
- low cost
- storage systems
- mobile devices
- personal computer
- learning algorithm
- database management systems
- data structure
- field effect transistors
- wireless communication
- index structure
- multi dimensional
- data analysis