Monolithic 3D Transposable 3T Embedded DRAM with Back-end-of-line Oxide Channel Transistor.
Jungyoun KwakGihun ChoeJunmo LeeShimeng YuPublished in: ISCAS (2024)
Keyphrases
- back end
- field effect transistors
- silicon dioxide
- user friendly
- data management
- embedded dram
- metal oxide semiconductor
- building blocks
- high speed
- data types
- random access memory
- leakage current
- low power
- integrated circuit
- databases
- database management systems
- dynamic random access memory
- memory subsystem
- power dissipation
- low cost
- preprocessing
- data structure
- database systems