The advantage of silicon carbide material in designing of power bipolar junction transistors.
Mehrez OueslatiHatem GarrabAtef JedidiKamel BesbesPublished in: SSD (2015)
Keyphrases
- high density
- space charge
- high power
- field effect transistors
- power consumption
- gallium arsenide
- electric field
- cmos technology
- data center
- silicon dioxide
- positive and negative
- information systems
- power management
- low power
- steady state
- low cost
- thin film
- power dissipation
- power distribution
- markov chain
- decision trees
- semiconductor devices
- image processing
- social networks