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Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor.
Moonyoung Jeong
Sangho Lee
Yootak Jun
Kiseok Lee
Seokhan Park
Jeonghoon Oh
Ilgweon Kim
Jemin Park
Published in:
IRPS (2024)
Keyphrases
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field effect transistors
high density
leakage current
low voltage
multiple input
high speed
random access memory
co occurrence
liquid crystal displays
steady state
line segments
antenna array
low power
multi channel
main memory
word recognition
power line
silicon dioxide