Electrical Performance and Stability Improvement of p-Channel SnO Thin-Film Transistors Using Atomic-Layer-Deposited Al₂O₃ Capping Layer.
Kang-Hwan BaeMin Gyu ShinSeong-Hyun HwangHwan-Seok JeongDae-Hwan KimHyuck-In KwonPublished in: IEEE Access (2020)